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PBSS4032PD Datasheet, NXP Semiconductors

PBSS4032PD Datasheet, NXP Semiconductors

PBSS4032PD

datasheet Download (Size : 208.11KB)

PBSS4032PD Datasheet
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PBSS4032PD transistor equivalent, 2.7a pnp low vcesat (biss) transistor.

PBSS4032PD

datasheet Download (Size : 208.11KB)

PBSS4032PD Datasheet
1.0 · rating-1

Features and benefits


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* Low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High colle.

Application


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* DC-to-DC conversion Battery-driven devices Power management Charging circuits 1.4 Quick referen.

Description

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4032ND. 1.2 Features
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* Low collector-emitter saturation.

Image gallery

PBSS4032PD Page 1 PBSS4032PD Page 2 PBSS4032PD Page 3

TAGS

PBSS4032PD
2.7A
PNP
low
VCEsat
BISS
transistor
NXP Semiconductors

Manufacturer


NXP (https://www.nxp.com/) Semiconductors

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